DTA

Digital Theses Archive

 

Tesi etd-09302016-100706

Type of thesis
Dottorato
Author
MANGANELLI, COSTANZA LUCIA
URN
etd-09302016-100706
Title
Investigation and modeling of novel silicon based integrated optoelectronic device
Scientific disciplinary sector
ING-INF/03
Course
INGEGNERIA - Ph.D. Programme in Emerging Digital Technologies (EDT)
Committee
relatore Prof. DI PASQUALE, FABRIZIO CESARE FILIPPO
Membro OTON NIETO, CLAUDIO JOSE
Membro CASTOLDI, PIERO
Membro ANDRIOLLI, NICOLA
Membro SORIANELLO, VITO
Membro TORNATORE, MASSIMO
Membro VERCHERE, DOMINIQUE
Keywords
  • electro-optic effect
  • Ring resonators
  • strain
  • switch
Exam session start date
;
Availability
completa
Abstract
In the wide-range discipline represented by Silicon Photonics, the optoelectronic integration and the high speed modulation are some of the most important frontiers. <br>This thesis describes the traditional approach of thermal tuning resonators filters for WDM applications and investigates novel materials for realizing very fast integrated optical modulators and switches.<br>Silicon Photonic technology is indeed highly promising for scalable integrated switch matrices for achieving extremely small sizes and for being CMOS-compatible. Ring resonators have been widely used as filters and modulators providing very compact and efficient basic switching elements. We designed, fabricated and experimentally validated single and double thermal tuned ring resonators for WDM systems.<br>A more innovative approach to the realization of fast integrated modulators and switches is given by the investigation of novel materials.<br>We propose a theoretical model to describe the strain-induced linear electro-optic effect in centro-symmetric crystals focusing on the case of strained silicon for its attractive properties for integrated optics, greatly simplifying the description of electro-optic effects in strained silicon waveguides.<br>The electro-optic effect is also investigated and experimentally validated for integrated Si3N4_Lithium Niobite chips.<br>Future perspective of the analysis of optical properties of strained materials are also briefly described for the case of strained silicon nitride.
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